Skip to main content
Posted July 10, 2026
Northrop Grumman

Principal /Senior Principal Microelectronic Semiconductor Engineer - R10239702

Manhattan Beach, CA, US Full Time
$114000 - $171000
Reference: R10239702

RELOCATION ASSISTANCE: No relocation assistance available

CLEARANCE REQUIRED FOR START: No

CLEARANCE TYPE: Secret

TRAVEL: Yes, 10% of the Time

Description

At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work — and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history.

The Semiconductor Materials group of Northrop Grumman Mission Systems (NGMS) is seeking a Microelectronics Semiconductor Engineer in our molecular-beam epitaxy (MBE) lab for our Space Park Foundry (SPF) located in Manhattan Beach, Los Angeles. We design, manufacture, and test semiconductor products for internal and commercial production customers, as well as emerging technology programs. Northrop Grumman’s SPF semiconductor foundry is a unique capability supporting a range of production microelectronic devices (Gallium Arsenide, Gallium Nitride, and Indium Phosphide) and providing leading-edge technology development in electronics. Our devices enable a number of Northrop Grumman’s ground, sea, air, and space systems. Join us to work with a talented, experienced team while helping serve your country.

Join our team to research, develop, and manufacture III-V compound semiconductors and advanced microelectronics materials. In this role, you’ll develop and optimize GaN-, InP-, and GaAs-based epitaxial materials using molecular beam epitaxy (MBE), evaluate next-generation materials for future device needs, and support production through disciplined tool operation, maintenance, and documentation. You’ll also collaborate closely with process engineering to improve quality, efficiency, and cost in a production environment.

Key Responsibilities:

Research, development, and manufacturing

  • Conduct research, development, and manufacturing of III-V compound semiconductors and advanced microelectronics materials.

  • Translate experimental work into repeatable, production-ready processes.

MBE growth and optimization

  • Develop and optimize GaN-, InP-, and GaAs-based materials using molecular-beam epitaxy (MBE).

  • Plan and execute growth runs, refine process conditions, and iterate based on results to meet material needs.

Next-generation materials evaluation

  • Research and evaluate next-generation materials to support future device requirements.

  • Document findings and experimental outcomes to inform next steps.

Equipment operation and maintenance

  • Support the operation and maintenance of MBE vacuum systems and semiconductor metrology equipment.

  • Perform routine checks and troubleshooting to sustain tool availability and consistent performance.

Manufacturing improvement and collaboration

  • Partner with process engineers to drive manufacturing design improvements in product quality, efficiency, and cost.

  • Support cross-functional alignment to ensure changes are implemented effectively.

Documentation and material control

  • Create clear written documentation of procedures, tool setups, and experimental results, with strong attention to detail.

  • Provide material control support for the purchasing, acceptance, and tracking of semiconductor materials in a production environment.

This position can be filled at Principal Microelectronic Semiconductor Engineer OR Senior Principal Microelectronic Semiconductor Engineer. Qualifications for both levels are listed below:

Basic Qualifications for Principal Microelectronic Semiconductor Engineer:

  • Bachelors degree in a STEM field (Science, Technology, Engineering, or Math) from an accredited institution with 5+ years of relevant experience,  Master degree in a STEM field with 3+ years of relevant experience or PhD with 1 year relevant experience.

  • Ability to work in a lab environment and lift materials/equipment as needed.

  • Hands-on experience operating an MBE growth system.

  • Understanding of materials characterization/analysis techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), non-destructive electrical measurements, and Hall effect measurements.

  • Understanding semiconductor materials basic.

  • US Citizenship required

  • Ability to obtain and maintain Secret clearance required

 

Basic Qualifications for Senior Principal Microelectronic Semiconductor Engineer:

  • Bachelors degree in a STEM field (Science, Technology, Engineering, or Math) from an accredited institution with 8+ years of relevant experience, Master degree in a STEM field with 6+ years of relevant experience or PhD with 4 years relevant experience.

  • Ability to work in a lab environment and lift materials/equipment as needed.

  • Hands-on experience operating an MBE growth system.

  • Understanding of materials characterization/analysis techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), non-destructive electrical measurements, and Hall effect measurements.

  • Understanding semiconductor materials basic.

  • US Citizenship required

  • Ability to obtain and maintain Secret clearance required

 

Preferred Qualifications

  • PhD in a STEM field.

  • Hands-on experience maintaining an MBE growth system.

  • Strong semiconductor background

  • Experience working with internal/external customers and suppliers.

  • Experience with GaN/InP/GaAs epitaxy operation and metrology.

Primary Level Salary Range: $114,000.00 - $171,000.00

Secondary Level Salary Range: $142,200.00 - $213,400.00

The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions.

Depending on the position, employees may be eligible for overtime, shift differential, and a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.

The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates.

Northrop Grumman is an Equal Opportunity Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO and pay transparency statement, please visit http://www.northropgrumman.com/EEO. U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.

Sign up for Job Alerts